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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package *High collector breakdown voltage: VCEO=800V(Min) *Excellent switching time: tr=1.0s(Max.) tf=1.0s(Max.@IC=0.8A APPLICATIONS *Switching regulator and high voltage switching applications *High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3148 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector dissipation TC=25 Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 5 1 1.5 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IC=0.8A; IB=0.16A IC=0.8A; IB=0.16A VCB=800V ;IE=0 VEB=7V; IC=0 IC=0.8A ; VCE=5V 10 MIN 800 900 2SC3148 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 0.6 1.2 100 1 V V A mA Switching times tr tstg tf Rise time Storage time Fall time VCC@400V; IC=0.8A IB1=0.08A;IB2=-0.20A; RL=50B;Duty cycleD1% 1.0 4.0 1.0 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3148 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3148 4 |
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